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Silicon carbide single crystals are extremely rare in nature and hardly exist. Can only rely on artificial synthesis. At present, the industrial production of silicon carbide substrate materials is mainly based on the physical vapor sublimation method. This method requires the powder to be sublimated in a high temperature vacuum environment, and then the sublimated components are grown on the surface of the seed crystal through the control of the temperature field to obtain carbonization. Silicon crystals. The whole process is completed in a confined space, with few effective monitoring methods and many variables, which requires extremely high process control accuracy.