Semiconductor Industry Network News: According to reports, Xiaopeng G9 will start pre-orders in August and officially launch in September. One of the highlights of this car is the use of 800V SiC (silicon carbide) high-voltage electric drive platform

Semiconductor Industry Network was informed that: On August 6, the 2022 Baishishan third-generation semiconductor summit with the theme of "win-win with 'core'" was held in Laiyuan, Hebei.

Semiconductor Industry Network News: On August 18, the third-generation semiconductor concept stocks strengthened, and the Choice Silicon Carbide Index (861369) rose by more than 4%.

Detailed steps to remove impurities from silicon carbide products:

  Silicon carbide products have rich sources of raw materials and many preparation methods, which can adapt to the requirements of various working conditions. They are engineering structural ceramics that may form an industrial scale in addition to alumina. A

Pure silicon carbide is a colorless and transparent crystal. Industrial silicon carbide is pale yellow, green, blue or even black due to the type and content of impurities, and its transparency varies with its purity.

Silicon carbide single crystals are extremely rare in nature and hardly exist. Can only rely on artificial synthesis. At present, the industrial production of silicon carbide substrate materials is mainly based on the physical vapor sublimation method.

Silicon carbide is a wide bandgap semiconductor material Compared with traditional materials, silicon carbide has excellent physical properties, which can help discrete devices, modules, and even complete systems to reduce volume and weight and improve efficiency.

On November 20, 2018, the third-generation semiconductor industry technology innovation strategic alliance ("CASA") released three alliance standards T/CASA 003-2018 "4H-SiC epitaxial wafers for p-IGBT devices",

Factors affecting quality in the production process of silicon carbide products: