Crystal growth: SiC crystals are usually grown by physical vapor transport (PVT) method.
The crucible is heated to more than 2000 ℃ by induction, and the temperature at the seed crystal is slightly lower than that at the lower micro powder, forming an axial temperature gradient in the crucible. SiC micro powder sublimates at high temperature to form gaseous Si2C, SiC2, Si and other substances, reaches the seed crystal with lower temperature under the driving of temperature gradient, and crystallizes on it to form cylindrical silicon carbide ingots.